The photodiode material is silicon, and the response spectrum is 300-1100nm; UV enhancement at 355nm; with a large target surface of 3000um, it is very suitable for doing low light detection, fluorescence detection and other applications.
This is a 500um diameter InGaAs APD photodetector, the wavelength range is 950-1700nm, Respondsivity at 1550nm is 0.9A/W, bandwidth 450MHz, we can provide die, but also according to customer packaging requirements for chip packaging, such as (TO package, pigtail package, etc.)
ingaas avalanche photodiode, Φ 2000μm, used for Distance measurement, Spatial light transmission, available in bare die, TO-CAN, pigtail, flange and other packages.